| 摘要 |
PURPOSE:To obtain the multilayer interconnection suitable for formation of the state of high density by a method wherein the lower layer of the first wiring film is formed on the surface of an Si substrate, and when the upper layer of the second wiring film is going to be provided adjoiningly on the first wiring film, a connection part is attached to the first wiring film, an interlayer insulating film is coated on the whole surface, the surface of the connection part is exposed by performing an etching, and the second wiring film is coated thereon. CONSTITUTION:A lower layer first wiring film 3 of the prescribed shape is formed using W, Ti and the like on the surface layer part of an Si substrate 1 for the purpose of reducing an electromigration through the intermediary of an impurity region 2 to be used as a contact. Then, a connection part 4 consisting of W and the like is fixed to a part of the surface of the wiring film 3, and the whole surface is coated by an interlayer insulating film 5 consisting of Si3N4 or polyimide resin. Subsequently, the surface of the film 5 is flattened by performing a plasma etching slightly, the surface of the connection part 4 is exposed, and the upper layer second wiring film 6 same as the above is coated on the film 5. Accordingly, not only a two layer wiring but also multilayer interconnection of high reliability can be obtained. |
