| 摘要 |
PURPOSE:To obtain an element not being restricted a spatial condition by a method wherein, in a solid-state image pickup element using a micropolycrystalline layer or a polycrystalline Si layer as the light carrier generating layer, the thickness of the generating layer is specified, and at the same time, a layer, which consists of a mixed non- crystal or a mixed crystal of more than a binary system and is being specified the kinds and concentrations of impurities to be contained therein and the thickness, is provided on the opposite side to the light incidence surface of the generating layer. CONSTITUTION:A glass substrate 11 is heated to about 260 deg.C, a back electrode 12 consisting of Al or Si and so forth is deposited thereon and a mixed non-crystal layer 13 is coated thereon, being made to position on the opposite side to the light incidence surface of a light carrier generating layer 14, which is provided after that. At this time, the layer 13 is constituted of a mixed non-crustal or a mixed crystal of more than a binary system of C, O2, N2 and so forth, or Si, and is made to contain B, Ga, P, As and so forth to 0.5-50,000ppm therein, and at the same time, the thickness thereof is specified to 0.005-1.5mum. After that, the light carrier generating layer 14 with the thickness being specified to 0.1-1.4mum is deposited thereon and the surface electrode 16 of an ITO is provided thereon through a mixed non-crystal blocking layer 15 consisting of Si and C and being added B to 2,000ppm. |
