METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of removing impurities remaining in a thiin film during film formation and altering performance of the thin film as impurity concentration changes.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: activating a modifying gas including at least one of a reducer, a nitriding agent and an oxidizer by plasma excitation; and modifying the thin film formed on the substrate by irradiating the thin film with the activated modifying gas.SELECTED DRAWING: Figure 6