发明名称 Image sensor and method of manufacturing same.
摘要 <p>An image sensor in which a valve metal or nitride thereof is employed as material for the electrode wiring of a metal film, and a part of the metal film wiring is oxidized to form a dielectric film of a charge storage capacitor, thereby providing a charge storage capacitor which has the high quality and enables high production yield. By forming a thin film photo diode on the dielectric film, the number of elements having a sandwich structure is reduced by half and the production yield is increased correspondingly.</p>
申请公布号 EP0162307(A2) 申请公布日期 1985.11.27
申请号 EP19850104850 申请日期 1985.04.22
申请人 HITACHI, LTD. 发明人 MATSUZAKI, EIJI;YORITOMI, YOSHIFUMI;KENMOTSU, AKIHIRO
分类号 H01L27/146;H01L31/09;H01L31/105 主分类号 H01L27/146
代理机构 代理人
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