发明名称 |
Image sensor and method of manufacturing same. |
摘要 |
<p>An image sensor in which a valve metal or nitride thereof is employed as material for the electrode wiring of a metal film, and a part of the metal film wiring is oxidized to form a dielectric film of a charge storage capacitor, thereby providing a charge storage capacitor which has the high quality and enables high production yield. By forming a thin film photo diode on the dielectric film, the number of elements having a sandwich structure is reduced by half and the production yield is increased correspondingly.</p> |
申请公布号 |
EP0162307(A2) |
申请公布日期 |
1985.11.27 |
申请号 |
EP19850104850 |
申请日期 |
1985.04.22 |
申请人 |
HITACHI, LTD. |
发明人 |
MATSUZAKI, EIJI;YORITOMI, YOSHIFUMI;KENMOTSU, AKIHIRO |
分类号 |
H01L27/146;H01L31/09;H01L31/105 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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