| 摘要 |
PURPOSE:To simplify a heat treatment process by a method wherein a gate electrode is formed to a required surface section in a gate oxide film on an n type Si substrate, a p type ion implantation layer is formed to the main surface section of the Si substrate while using the gate electrode as a mask, and a polycrystalline Si film is shaped on the gate electrode and turned into source-drain layer through heat treatment. CONSTITUTION:A gate oxide film 2 is formed on the main surface of an n type Si substrate 1, and a gate electrode 3a is shaped to a necessary surface section in the oxide film 2. P type ion implantation layers 4a, 4b are formed on both sides of the gate electrode 3a on the main surface section of the substrate 1 through a p type impurity ion implantation method using the gate electrode 3a as a mask. A polycrystalline Si film 9 is shaped on the gate electrode 3a, and the layers 4a, 4b are turned into p type source-drain layers 5a, 5b through heat treatment in an atmospheric atmosphere while the resistance of the electrode 3a is lowered. The surface of the Si film 9 is turned into an SiO2 film 9a, thus preventing the oxidation of the electrode 3a. An insulating film 6, a gate wiring film 7 and source-drain wiring films 8a, 8b are formed, thus obtaining an MOS transistor. |
