| 发明名称 |
Improved semiconductor substrates. |
| 摘要 |
<p>Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices such as integrated circuits, containing oxygen are doped with sufficient nitrogen to enhance thermal precipitation of the oxygen.</p> |
| 申请公布号 |
EP0162830(A1) |
申请公布日期 |
1985.11.27 |
| 申请号 |
EP19850870055 |
申请日期 |
1985.04.18 |
| 申请人 |
MONSANTO COMPANY |
发明人 |
CHIOU, HERNG-DER;MOODY, JERRY WOFFORD |
| 分类号 |
H01L21/322;H01L29/167;(IPC1-7):H01L29/167 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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