发明名称 |
Method of making semiconductor memory device |
摘要 |
Herein disclosed is a semiconductor memory device which is composed of a peripheral circuit unit equipped with a gate protection circuit having a protection resistor and a memory cell unit so that it can be used as an MISFET type static RAM and which is characterized in that the protection resistor is made of a polycrystalline silicon film having substantially the same resistivity as that of an overlying polycrystalline silicon film formed to merge into the load resistor of the memory cell unit.
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申请公布号 |
US4554729(A) |
申请公布日期 |
1985.11.26 |
申请号 |
US19820341623 |
申请日期 |
1982.01.22 |
申请人 |
HITACHI, LTD. |
发明人 |
TANIMURA, NOBUYOSHI;YASUI, TOKUMASA |
分类号 |
G11C11/417;G11C11/412;H01L21/02;H01L21/3215;H01L21/822;H01L21/8234;H01L21/8238;H01L21/8244;H01L27/02;H01L27/04;H01L27/06;H01L27/092;H01L27/11;H01L29/78;(IPC1-7):H01L21/28;H01L21/26 |
主分类号 |
G11C11/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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