| 摘要 |
A multicolor or other multilevel infrared detector comprises at least one first detector element formed in a first portion of a lower body, e.g. of cadmium mercury telluride. At least one second detector element, having different detector characteristics, is formed in an upper body, e.g. of cadmium mercury telluride. The lower body is divided, preferably by ion etching into at least two (and more usually three or more) portions separated from each other by gaps. The gaps in the lower body are bridged by the upper body. Electrical connections to the second detector elements comprises the separate portions of the lower body. The electrical connections include metallization layers extending from the top to the substrate on which the lower body is mounted. The substrate may be of insulating material, e.g. sapphire, or it may be for example a silicon CCD for processing signals from the detector elements.
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