| 摘要 |
PURPOSE:To enable to evaluate the electric characteristics of a high resistant semiconductor in a non-destructive manner by a method wherein the measurement of the life of a carrier using microwaves is performed while the temperature parameter is being swept. CONSTITUTION:The microwaves emitted from a microwave generator 1 are made to irradiate on a sample 6 from the port of a vacuum chamber 5 through a circulator 3. Also, a bean 11 sent from a laser 13 made to irradiate on a part of the microwave irradiating part located in the surface of the sample, a free carrier is excited in a substrate. The reflected microwaves are detected by a detector 10 through a circulator 3. The temperature on a temperature variable sample stand is converted into an electric signal by a thermocouple 8 and a temperature detector 14. The output of the amplifier 12 of a detection signal is inputted to an oscilloscope 15 in synchronization with a pulse-formed laser beam 11, and the time constant of transient attenuation is measured. The temperature signal and the detection signal are sent to a signal processing part 16 and analyzed there. |
