| 摘要 |
PURPOSE:To attain high sensitivity in a longer wavelength range and superior stability to a temp. change by forming a photosensitive Se-As layer free from film defects such as pinholes and having a specified structure on an electrically conductive substrate. CONSTITUTION:A photosensitive layer consisting of the 1st layer 2 of 10-30mum thickness made of Se contg. about 20-30wt% As and the 2nd layer 3 of 10- 70mum thickness made of Se contg. about 30-45wt% As is formed on an electrically conductive substrate 1. Since the layer 2 having the lower As content is formed on the substrate 1 side, the temp. of the substrate 1 during vapor deposition can be reduced, so the release of occluded or adsorbed gas from the substrate 1 is inhibited, whereby film defects such as pinholes and image defects resulting from the film defects are prevented. Since the difference in As content between the layers 2, 3 is small, a sensitive body which is hardly affected by its heat history and has durability can be obtd. Since the average As content of the photosensitive layer is high, high sensitivity especially in a longer wavelength range of >=700mum can be attained. |
