| 摘要 |
A method for forming heterostructures comprising multiconstituent epitaxial material, on a substrate comprises formation of a layer of "precursor" material on the substrate, and momentarily melting the precursor material by pulsed irradiation. The precursor material has the same major chemical constituents as the multiconstituent material to be formed, albeit not necessarily in the same proportions. In at least some systems (e.g., nickel or cobalt silicides on Si), solid state annealing of the re-solidified material often improves substantially the quality of the epitaxial material formed, resulting in substantially defect-free, substantially monocrystalline, material. An exemplary application of the inventive method is the formation of single crystal epitaxial NiSi2 on Si(100).
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