CONDUCTIVE MODULATION TYPE MOSFET

摘要

PURPOSE:To suppress a latchup phenomenon by setting an interval of the first conductive type base layers opposed at an interval via the second conductive type semiconductor layer under a gate electrode to a specific interval. CONSTITUTION:An n<-> type layer 12 and a gate oxide film 15 are formed on a p<+> type Si substrate 11 and a gate electrode 16 of a polysilicon film is formed. Boron is diffused to form a p type base layer 13. As ions are implanted, heat treatment is performed to form an n<+> type source layer 14. A source electrode 17 is formed by depositing and patterning an aluminum film. A drain electrode 18 is formed by depositing a V-Ni-Au film. The opposing distance (a) of the layer 13 under the electrode 16 is set to small value of 20mum or less, thereby obtaining a conductive modulation type MOSFET which does not cause a latchup up to 750A/cm<2>.