| 摘要 |
PURPOSE:To suppress blooming structually in terms of a solic-state image pickup device for employing a source joint as a photodiode by providing the 2nd conductive area with higher density than an impurity density of a semiconductor layer for enclosing a drain area and extending under a gate electrode. CONSTITUTION:By providing a P<+> layer 26 having an impurity density of 5X 10<15>-10<18>cm<-3>, a potential obstruction with respect to electrons is formed in the vicinity of an N<+>-based diffusion layer 24, can suppress a parasitic lateral bipolar effect, and simultaneously has a suppressing effect with respect to electrons for flowing from a depth of a S1 substrate 19. Furthermore said potential obstruction can suppress a line-sensitive blooming signal where the N<+> diffusion layer 24 connecting to a conventional signal line 18 is sensitized and a false signal is generated.
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