| 摘要 |
PURPOSE:To reduce crystal line grain boundary generated in an island region by single-cyrstallizing the island non-single-crystal semiconductor region formed on an insulator through irradiation of energy beam from the side of island region so that single-crystallization progresses toward the periphery from the center of island region. CONSTITUTION:An island region 1 and periphery thereof are single-crystallized like the conventional case and the beams B are irradiated within a short period of time toward the side portions of island region 1 from the areas elevated a little from the sides of four corners. The energy of beam B heats and fuses islant region 1 within a short period of time without absorption by insulation layer 3 and cap layer 4. Since the energy is absorbed at the side more than other area in the island region 1, temperature distribution of at the center of island region 1 becomes higher than the side portions. Therefore, in the cooling process after irradiation of beam B, an initial crystal 6 is produced at the center, this initial crystal 6 grows up to the entire part of island region 1, thereby completing the single-crystallization. Since the single-crystallization is carried out as explained above, crystalline grain boundary is little generated in the single-crystallized island region 1. |
