| 摘要 |
<p>PURPOSE:To acquire a highly sensitive permeable NEA GaAs photoelectric screen which can absorb or relieve defects such as rearrangement from a grid unconformity, by adding Be near a GaP monocrystal plate and a GaAs monocrystal layer, and forming a layer of a material which generates negative electron affinity (NEA) over the GaAs monocrystal layer. CONSTITUTION:A GaP monocrystal wafer is arranged as a plate 1 on the plate holder 5 in a crystal growing tub 18 of MBE system. Then, temperatures of the plate 1, a Ga molecular beam source cell 7, As molecular beam source cell 6, and Be molecular beam source cell 8 are set at specific temperatures, shutters 9, 10, and 11 are opened, and GaAs crystals are grown up on the GaP plate surface to form a GaAs monocrystal membrane 3 thereover. In a super high vacuum, the growing surface 21 is activated (NEA is given) by Cs-O or Cs-Sb etc., and a highly sensitive permeable type photoelectric screen is made up.</p> |
