| 摘要 |
PURPOSE:To increase easily the impedance at the input side by using a high frequency transistor having a discoid shell and two long emitter leads, a base lead and a collector lead extended in four directions from said shell as an active element of an emitter-earthed amplifier circuit. CONSTITUTION:A high frequency transistor 26 uses a micro-X type or a disk mold type containing two long emitter leads 42, a long base lead and a collector lead extended in four directions from a discoid shell 40. The both sides of copper foils 52 and 52 of reference potential point are cut in triangular shapes at the areas having contacts with emitter leads 42 respectively. Thus the inductance component is produced in a frequency area of a wide-band signal supplied to an input contact plug 20 and between both foils 52 and a contact copper foil part 54. This is equivalent to a case where an inductance 56 is put between both leads 42 and a reference potential point. Therefore the input impedance of an emitter-earthed amplifier circuit 24 is increased. |
