发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To stabilize a lateral mode with simple manufacturing process by forming a piezoelectric film on a semiconductor laser, forming a pectinated electrode on the film, thereby exciting surface acoustic wave in a light propagating direction. CONSTITUTION:A ZnO piezoelectric film 9 is formed on an upper electrode 6 and a pectinated electrode (IDT) 10 for exciting surface acoustic wave to propagate in a light propagating direction is formed. When an electric field is applied from the upper electrode 6 and a current is implanted to P-AlxGa1-xAs layer 3, electrons are excited in the active region, recombined with holes to emit a light. Elastic surface wave is excited by an IDT10 and when the surface wave is propagated in the light propagating direction, light is Bragg diffracted in the active region, and oscillated in a DFB mode. A laser oscillating region width can be controlled in response to the electrode crossing width of the IDT 10 to stabilize the lateral mode.
申请公布号 JPS60236275(A) 申请公布日期 1985.11.25
申请号 JP19840094866 申请日期 1984.05.09
申请人 MITSUBISHI DENKI KK 发明人 KURODA KENICHI;HISAMA KAZUO;KOJIMA KEISUKE
分类号 H01S5/00;H01S5/12 主分类号 H01S5/00
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