| 摘要 |
PURPOSE:To obtain a protective element which does not concentrate a current with low breakage rate by constructing to form a unipolar transistor and a bipolar transistor when applying static electricity of threshold voltage or higher between pads. CONSTITUTION:When a static electricity of threshold voltage or higher is applied between a P<+> type semiconductor region 16 and a P<+> type semiconductor region 26 between Vcc pad 1 and other pad 2, a P-channel 60 is generated, a P-channel MOS transistor (Tr) 200 with the region 16 as a source and with the region 26 as a drain, and with metal connected with the pad 2 as a gate, and a bipolar N-P-N Tr300 with N<+> type semiconductor region 15 and N type semiconductor layer 20 as collector, with the region 26 as a base and with an N<+> type semiconductor region 25 as an emitter are produced. Static electricity is absorbed by the FET200, and the Tr300, and an element connected between the pads 1 and 2 is protected by a protective element of the FET200 and the Tr300. Static electricity is branched to the FET200 and the Tr300, thereby reducing the breakage rate of the protective element. |
