| 摘要 |
PURPOSE:To prevent a contacting resistance between a widing conductor layer in an electrode window and a semiconductor layer from increasing simultaneously by removing by isotropically ethcing a polycrystalline silicon layer coated on a step to form the step, thereby improving the step coating. CONSTITUTION:A gate powder source beam is formed of polycrystalline silicon layers 3, 4 on a semiconductor substrate 1, a load resistor is formed of a polycrystalline silicon layer 5, coated with a silicon dioxide layer 2 having a gate oxide film, a field oxide film and an interlayer oxide film, and a PSG layer 6 is coated as a cover film. An electrode window 7 is opened, a polycrystalline silicon layer 8 is coated, arsenic ions are implanted, and annealed. The layer 8 is removed by isotropically etching. A step is buried with the layer 8 to form an oblique surface, thereby improving the step coating. A conductive layer 9 is coated. An oblique surface is formed to prevent the contacting resistor between a wiring conductive layer 9 and the substrate from increasing by a ring-shaped remaining polycrystalline silicon layer. |
