| 摘要 |
PURPOSE:To form a semiconductor device, the open defectives of a junction section thereof reach 0% by a test having high reliability such as a thermal fatigue test at 10,000 cycles, by bringing the length of collapse of a bonding wire in the junction section to specific times as thick as the size of the bonding wire. CONSTITUTION:The length of collapse of a bonding wire represents the length of a bonding wire in a junction section collapsed by plastic deformation, etc. on ultrasonic bonding or thermo-sonic bonding, and is approximately equal to the length of the joining of the bonding wire and a pad electrode. When the size (a diameter) of the bonding wire is represented by D, L=(3.0-3.5)D is obtained as the results of numerous trials and tests, and the area of the junction is reduced and there are possibility of which open defectives, etc. are generated when L extends over 3D or less. When L extends over 3.5D or more, contact resistance and lateral resistance are minimized sufficiently, but L of 3.5Dmax is proper in consideration of workability. |
