| 摘要 |
PURPOSE:To form uniform and faultless film even in the case of a CVD film and epitaxial film by uniformly heating a wafer through an equally heating tube and locating such equally heating tube only at a side of wafer and exhausting adhesives without touching with wafer even when these are dropped. CONSTITUTION:A reaction tube 21 is irradiated with the infrared ray emitted from a lamp 27 directly or through a reflector 28. Since the reaction tube 21 is formed with quartz, the infrared ray pases substantially through the reaction tube 21 and reaches an internal equally heating tube 26. The heat equalizing tube 26 generates heat when it is heated by absorbing the infrared ray and works as the thermostatic wall for internal space in order to almost equally heat the space. Thereby, the wafer 35 placed therein is heated up to a vapor growth temperature. Meanwhile, the internal wall of heat equalizing tube 26 is heated up to a high temperature and is directly in contact with reaction gas, reaction product is adhered thereto. But it does not give any adverse effect on heating of wafer 35 carried out through the heat equalizing tube 26. Even when adhesives are separated and are dropped, these certainly drop downward by the downward flow of gas which is supplied from a gas supply nozzle 30 and is exhausted from and exhaustion port 32. |
