| 摘要 |
PURPOSE:To economically form a film within a minute short period by allowing growth of a film at the desired region on a substrate where a nucleus is formed by irradiation of ultraviolet ray through irradiation of visible laser beam to such region in a reaction chamber where a process gas is supplied. CONSTITUTION:Pressure within a reaction chamber is set adequately by opening an exhaustion port 5 and adequately setting supply of gas from a gas cylinder 2 and a substrate 10 is irradiated with the ultraviolet ray withing a short period (about several minutes) from an ultraviolet ray source 6 through a window 7A. Irradiation of such ultraviolet ray realizes formation of a very thin film or process gas (nucleus for growth of film) on the substrate. Next, a holder 9 is moved so that the substrate 10 is placed just under a window 7B by means of a holder moving mechanism 11. Here, the laser beam is focused to the desired position on the substrate 10 from a laser source 8 through the window 7B for irradiation for very short period (about several seconds) in accordance with thickness of film. This irradiation allows the growth of film because the laser energy is absorbed by the nucleus, only at the area where is irradiated with the visible laser beam. |
