METHOD OF DETECTING DEFECTS WITH INCREASED LEAKAGE CURRENTS IN SEMICONDUCTOR STRUCTURES,申请号SU19813331486-传众专利搜索

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发明名称	METHOD OF DETECTING DEFECTS WITH INCREASED LEAKAGE CURRENTS IN SEMICONDUCTOR STRUCTURES
摘要
申请公布号	SU1010997(A1)	申请公布日期	1985.11.23
申请号	SU19813331486	申请日期	1981.08.17
申请人	FIZIKO-TEKHNICHESKIJ I IM.A.F.IOFFE	发明人	ANDREEV V.M.,SU;SULIMA O.V.,SU
分类号	H01L21/66;(IPC1-7):H01L21/66	主分类号	H01L21/66
代理机构		代理人
主权项
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