| 摘要 |
PURPOSE:To prevent a mask pattern from becoming defective again and thereby improve the defect correcting efficiency, by covering a transparent substrate surface with a resist except for a black defect part, and removing the exposed black defect part by means of a laser beam. CONSTITUTION:A positive resist 6 is applied to the whole surface of a substrate on which a chromium film is formed, and prebaking is effected. Defect position coordinate data is input to a spot exposure apparatus, and light having a wavelength by which the resist 6 is sensitized is applied to black defect parts 31, 32 of the resist 6, and development is carried out. In consequence, the resist 6 is opened at the defect parts 31, 32, and windows 71, 72 are thereby formed. Laser beams are applied to the defect parts 31, 32 exposed through the windows 71, 72, thereby removing the chromium undesirably remaining. Since the substrate surface except for the defect parts is covered with the resist 6, any chromium 8 scattered by the irradiation with the laser beams is attached onto the resist 6 and removed together therewith. |
