| 摘要 |
PURPOSE:To obtain an image sensor having a high S/N, high resolution and high reliability by forming laminated structure in which a blocking diode is shaped onto a photodiode through a light-shielding layer consisting of a metal. CONSTITUTION:A discrete electrode 22 is evaporated onto an insulating substrate 21, blocking diodes 31 using amorphous Si as base bodies are shaped, molybdenum is evaporated in 1,000Angstrom as light-shielding layers 32, and photodiodes 33 employing amorphous Si as base bodies are formed. A protective layer 34 is shaped, transparent conductive films 24 and light-shielding layers 25 are formed, and lastly insular color filters 26 in three rows are shaped. Accordingly, the conductive light-shielding layers 32 are formed and the projection of beams to the blocking diodes 31 is inhibited in the color image sensor, thus preventing a malfunction, then improving reliability. |
