Semiconductor die with high pressure cavity

摘要

A semiconductor die includes a device structure having a micro-electronic device located at a surface of a substrate and a cap coupled to the device structure with the micro-electronic device positioned in a cavity located between the cap and the substrate. A sacrificial material is provided within the cavity, coupling the cap to the device structure. The sacrificial material is heated in the cavity to cause the sacrificial material to decompose to a gaseous species. The presence of the gaseous species in the cavity increases a pressure level in the cavity from an initial pressure to a final pressure.

主权项

1. A method of fabricating a semiconductor die that includes a device structure and a cap defining a hermetically sealed cavity, the device structure having a micro-electronic device located at a surface of a substrate, the method comprising:
providing a sacrificial material within the cavity, wherein the sacrificial material comprises a thermoplastic polymer; coupling the cap to the device structure with the micro-electronic device positioned in the cavity; and heating the sacrificial material in the cavity to cause the sacrificial material to decompose to a gaseous species to increase a pressure in the cavity from a first pressure level to a second pressure level, wherein heating the sacrificial material is performed at a temperature sufficient to entirely decompose the sacrificial material to the gaseous species.