| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device includes a bottom substrate, wherein a front-end device including a microelectromechanical systems (MEMS) device and an inductor is disposed on the bottom substrate, and a top substrate bonded to the bottom substrate so as form a cavity enclosing the front-end device. The semiconductor device further includes an adsorption layer disposed on a portion of the top substrate facing the front-end device, wherein the adsorption layer and the inductor do not overlap in a vertical direction. | ||
| 申请公布号 | US9415999(B2) | 申请公布日期 | 2016.08.16 |
| 申请号 | US201514738582 | 申请日期 | 2015.06.12 |
| 申请人 | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION | 发明人 | Zheng Chao;Wang Wei |
| 分类号 | B81B7/00 | 主分类号 | B81B7/00 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A semiconductor device comprising: a bottom substrate, wherein a front-end device including a microelectromechanical systems (MEMS) device and an inductor is disposed on the bottom substrate; and a top substrate bonded to the bottom substrate so as form a cavity enclosing the front-end device, wherein the semiconductor device further includes an adsorption layer disposed on a portion of the top substrate facing the front-end device and a sidewall of the cavity, and wherein the adsorption layer and the inductor do not overlap in a vertical direction, and the adsorption layer and the MEMS device overlap in the vertical direction. | ||
| 地址 | CN | ||