| 摘要 |
PURPOSE:To prevent electrostatic breakdown without affecting normal circuit operation by connecting a diode element in parallel between an external terminal and a transistor element. CONSTITUTION:A junction type diode element 5 consisting of an N type first region and a P type second region is isolated electrically from a transistor element 2 and formed to a semiconductor substrate 1, and a first region in the diode element 5 is connected to a collector region in the transistor element 2 and a second region to an emitter region in the transistor element 2, thus connecting the diode element 5 between a collector and an emitter in the transistor element 2 while reversing polarity. Consequently, no circuit operation is affected because input signals do not flow through the diode element 5 on normality. When surge voltage is applied to external terminals, the diode element 5 and the transistor element 2 mutually absorb surge voltage, thus preventing the breakdown of the elements. |
