| 摘要 |
PURPOSE:To tune the wavelengths of single longitudinal mode oscillation without changing injecting currents by forming an MIS structure to one part of a laser cavity and constituting the titled device by two cavities of a cavity injecting currents and a cavity conducting tuning. CONSTITUTION:A layer 2, a layer 3, a layer 4 and a layer 5 are grown continuously on an N-GaAs substrate 1, thus forming a double hereto-junction. The layer 5 and the lower layer 4 of the layer 5 are removed partially and an SiO2 film 6 is attached onto the layer 5 and the exposed layer 4, a striped window is shaped to the SiO2 film 6 on the layer 5, and a p side ohmic electrode 7 for injecting currents is formed. An n side ohmic electrode 8 is also shaped on the substrate 1 side, and a metallic film 9 is formed to one part on the SiO2 film 6 attached onto the layer 4, thus forming MIS structure. When currents are injected to a cavity l1, laser oscillation is generated, and stable single longitudinal mode oscillation is observed. When a cavity l2 is biassed, oscillation wavelengths can be tuned continuously under a fixed optical output. |
