| 摘要 |
PURPOSE:To reduce the pressure applied during diffusion welding in a multi- layer semiconductor integrated circuit, by forming the part of a vertical wire in a first active layer contacted with a vertical wire in a second active layer so as to have a triangular or trapezoidal cross section. CONSTITUTION:An end of a vertical wire 220 in a first active layer is formed to have a triangular cross section. In practice, however, it may be formed into a conical shape when the aperture in a first insulation film 202 is circular, and into a pyramid when the aperture is square. When such second active layer is superposed on the first active layer, the tip 221 of the first vertical wire 220 is contacted with the surface of a metal bump in the initial stage when no pressure is applied. Accordingly, if a slight pressure is applied after that, all the pressure is concentrated at the tip 221. The first vertical wire 220 or the metal bump is therefore easily deformed plastically. Thus, any dirty or oxide film is broken and it is facilitated to perform diffusion welding. |
