| 摘要 |
PURPOSE:To reduce the power consumption of a semiconductor storage device of a static RAM, etc. by controlling a word level generating means based on and address signal and a write signal, and adjusting variably a word line level. CONSTITUTION:A word line level generating circuit 6 is controlled by an address signal and a write signal, an inversion write signal is in a high level, and when an address signal is varied, an output of a circuit 4 rises to a power supply voltage VCC level, and readout of a memory cell MC is executed. When this readout section is ended, a signal WLPD becomes H, a transistor Q5 is turned on and the word line becomes a ground level. In the same way, at the time of write, the word line WL becomes an intermediate voltage of the voltage VCC and the ground voltage, and becomes a ground level, after a write section has been ended. By a variable adjustment corresponding to write and read-out states of this word line level, it is prevented that an unnecessary current flows to the word line, and the current consumption of a semiconductor device of a static RAM, etc. is reduced. |
