发明名称 MANUFACTURE OF INFRARED DETECTOR
摘要 A method of manufacturing an infrared detector in which an infrared sensor element, a field-effect transistor and a high-resistance lead resistor are mounted in a housing. Known infrared detectors use separate and comparatively expensive chip resistors as lead resistors. In order to be able to produce the infrared detector more inexpensively, a method is proposed in which the resistor is applied to a substrate element which consists of a heat-resistant thermoplastic and then cured. <IMAGE>
申请公布号 JPS60235026(A) 申请公布日期 1985.11.21
申请号 JP19850076880 申请日期 1985.04.12
申请人 PUREE EREKUTOROFUAINMEKANITSUSHIE UERUKE YAKOBU PUREE NATSUHAFUORUGERU YONZU LTD 发明人 GOTSUTOFURIITO BERUTOHORUDO;UARUTERU MIYUURERU;DETOREFU POPERA;HAINTSU YURUGEN JIIDE
分类号 G01J1/02;G01J5/34 主分类号 G01J1/02
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