| 摘要 |
Glass frits for use in the fabrication of thick film, RuO2-based resistors exhibiting temperature coefficient of resistance values of less than 100 ppm, consist essentially, expressed in terms of mole percent on the oxide basis, of 32 - 39% PbO, 44 - 47% B2O3, 14 - 17% SiO2, and an effective amount up to 5% of WO3 or MoO3. Such frits are used in resistor inks used for the fabrication of such resistors. |
