发明名称 SILVER THIOGALLATE SINGLE CRYSTAL LAYERS EPITAXIALLY GROWN FROM POTASSIUM CHLORIDE-SILVER THIOGALLATE SOLUTION
摘要 <p>Method of making a thin, high purity single crystal layer of silver thiogallate. According to the preferred embodiment of this method, a seed crystal substrate of silver thiogallate is dipped into a molten solution of silver thiogallate dissolved in potassium chloride. Upon slowly cooling the solution, the thin layer of single crystal silver thiogallate forms on the substrate. Upon removal, very little of the potassium chloride adheres to the surface, and what does adhere to the surface can be easily removed by washing the surface with hot water.</p>
申请公布号 WO1985005135(A1) 申请公布日期 1985.11.21
申请号 US1985000624 申请日期 1985.04.26
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