| 摘要 |
PURPOSE:To obtain a semiconductor device including a conductive material suitable for enhanced integration by a method wherein a device is furnished with a conductive section composed of a multi-element alloy at least containing one of the metal elements of the IV, V, or VI group, Si, and Fe. CONSTITUTION:A conductive section composed of a multi-element alloy at least containing one of the metal elements of the IV, V, or VI group, Si, and Fe is provided. For example, a MOS-type transistor gate electrode 15 is built of a multi-element alloy composed of Mo, Si, and Fe, by the sputtering method using a target that is a 5cm-diameter circle constituted of a 240 deg. Si sector 21, 84 deg. Mo sector 22, and 36 deg. Fe sector 23, as illustrated. This simplies the manufacturing process. In a device designed as such, a gate electrode 15 presents a lower resistivity with its breakdown-withstanding capability improved, all contributing to the creation of a semiconductor device containing a conductive section composed of a conductive material suitable for higher integration. |
