| 摘要 |
PURPOSE:To stabilize high acceptance potential and to obtain superior light fatigue resisting characteristics by forming an electrostatic charge blocking layer, a charge transfer layer, and a charge generating layer, each layer being of a specified a-Si type, on a substrate in succession, and incorporating a specified amt. of O in said blocking layer. CONSTITUTION:The charge blocking layer 44 made of a-SiC, the charge transfer layer 42 made of a-SiC and/or a-SiN, and the charge generating layer 43 made of a-Si, Si of each layer hydrogenated and/or fluorinated, are formed on the substrate 41 in this order from its side. The layer 44 contains O in an amt. of 1- 20atomic% of Si+C+O, and further, C in an amt. of 30-70atomic%. The layer 42 contains C or N in an amt. of 10-30atomic%. A surface modifying layer 45 made of hydrogenated and/or fluorinated a-SiC or a-SiN contg. C in an amt. of 10-70atomic% is formed on the layer 43. The content of O in the blocking layer 44 can enhance dark resistance in spite of having charge blocking ability and lower its temp. dependence, thus enhancing the usable upper limit of a photosensitive body. |
