| 摘要 |
In a method of forming a pattern of metal elements arranged with small gaps (9a) therebetween on a substrate (1) in a magnetic bubble memory device, or the like, a pattern forming layer having metal portions (7, 10), adapted for forming pattern elements, and insulating portions (9) for providing the gaps, is formed on the substrate, and thereafter the pattern forming layer is processed using a photolithographic technique, to form the pattern (7a, 10a, 10b). By using this method, it is possible to form a permalloy propagation pattern with gaps of a size smaller tham 1 mu m in, for example, a magnetic bubble memory device, with the aid of conventional photolithographic techniques. |
