| 摘要 |
PURPOSE:To enable to easily change the threshold voltage of the titled circuit by a method wherein the source and drain region of either of a P-channel or an N- channel MOS transistor is divided into a plurality of sets, and the channel width is changed by changing its wiring only. CONSTITUTION:The second conductive type well 20 is provided on a first conductive type semiconductor substrate, a strip-formed insulating film extending to the first conductive type region passing through the center part of the well 20 is provided, and a gate electrode 25 is formed thereon using polysilicon and the like. Then, a plurality of sets of source and drain regions are formed on either of the first conductive type region or a well 20, and a set of source and drain region is formed on the other region. Then, a set of the second conductive type source and drain region consisting of two diffusion regions 21a and 21b facing the gate electrode 25 is formed, and three sets of the first conductive type source and drain regions 22a, 22b, 23a, 23b, 24a and 24b consisting of two diffusion regions facing the gate electrode 25 are formed on the other region, namely, the well 20. |
