| 摘要 |
PURPOSE:To realize a double gate type thin-film transistor capable of self- alignment by a method wherein source-drain electrodes are constituted of transparent conductive film. CONSTITUTION:On an glass substrate 19, Al is deposited by evaporation and patterned into a first gate electrode 20. Al2O3 is deposited by evaporation to be a first gate insulating film 21 and, further, a semiconductor film 22 of CdSe is deposited by evaporation. A P type photoresist 23 is applied, ultraviolet rays are projected from the side of the substrate 19 for the exposure of the photoresist 23 with the electrode 20 acting as a mask. The photoresist 23 is retained only on the electrode 20 when development is completed. Then, a transparent film 25 is formed thereon. A process follows wherein the photoresist 23 is removed and the transparent conductive film 25 on the channel is lifted off. Thereon, a second gate insulating film 26 is formed. An N type photoresist 27 is laid by application to be exposed to rays from the side of the substrate 19 with the electrode 20 acting as mask. The ultraviolet rays are transmitted through the transparent electrode 25 sensitizes the photoresist with the exception of a portion located on the electrode 20. |
