| 摘要 |
PURPOSE:To obtain a highly integrated semiconductor device having small electrostatic capacitance by a method wherein a connecting pad is provided between the corner parts of a chip and an inner lead frame, and the short-circuit generating between wires is prevented by reducing the length of a bonding wire. CONSTITUTION:A connecting pad 15 provided between the corner parts of a chip 11 and an inner lead frame 14, and the connection of the first bonding pad 12 of the corner part of the chip 11 and the second bonding pad 13 of the corner part of the inner lead frame 14 is performed through the intermediary of said connecting pad 15. As a result, the length of a bonding wire 16 at the corner part can be made shorter, and an IC package to correspond with the formation of multipins can be obtained without enlarging the package. |
