| 摘要 |
PURPOSE:To realize a semiconductor device including an Si-MOS-Tr without an increase in the number of manufacturing steps by a method wherein a metal wiring layer is formed of Pd so that natural oxide may be removed from a contact hole for the realization of a high-reliability electrical connection between the metal wiring layer and Si. CONSTITUTION:On a P type semiconductor substrate 21, a field insulating film 22, diffused layer 23 implanted with an N type impurity, polycrystalline Si film 24, and then an insulating film 25 are formed, to be followed by the provision of a contact hole 26 by etching with a photoresist film acting as a mask. A Pd wiring layer 38 is formed on the contact hall 36 covered with a naturally formed thin oxide film 37. A treatment is accomplished in H2, whereby the natural oxide is reduced by activated H for the establishment of an electrical connection between the Pd wiring layer 38, diffused layer 33, and polycrystalline Si film 34. |
