| 摘要 |
FIELD: physics.SUBSTANCE: invention relates to ion-plasma sputtering, in particular, to ion-beam sputtering of targets for producing thin-film conducting, semiconductor and dielectric coatings on moving or rotating substrates of large area. Ion sputtering device comprises, installed in a vacuum chamber, extending along longitudinal axis O ion source with closed electron drift with vertical axis Z, gas feed system, extended target substrate holder and a DC voltage source. Ion source includes electrically connected upper and lower magnetic conductors of a closed shape with corresponding upper and lower pole tips of cathode, which bound outlet slot with an O-shape with extended sections. parallel to longitudinal axis O, as well as arranged in, bounded by inner surfaces of upper and lower magnetic conductors, anode closed volume and a magnetic system in form of a group of evenly placed over ion source of permanent magnets, wherein anode is located opposite outlet slot. DC voltage source is connected by lead with positive potential to anode, and by grounded lead with negative potential to magnetic conductors and target. Target and substrate holder lie opposite each other and are arranged on side of lower and upper pole tips of cathode, respectively, wherein substrate holder is mounted with possibility of movement. Target is in form of a cylinder and is mounted with possibility of rotation around its axis, which is parallel to longitudinal axis of ion source O and crosses its vertical axis Z. Surface of upper and lower pole tips of cathode and opposite anode surface are parallel to each other with an inclination to target, or surface of upper and lower pole tips of cathode and opposite anode surface are parallel to vertical axis Z, wherein upper pole tip of cathode extends towards vertical axis Z relative to lower pole tip of cathode, wherein angle α between lying in one plane and crossing surface of target in common point of middle line of output slot on its extended section and normal to surface of target is selected from interval of 50-70°.EFFECT: technical result is reduction of material consumption of target with its uniform sputtering effective.10 cl, 3 dwg |
