| 摘要 |
PURPOSE:To improve etching characteristic and manufacturing efficiency by causing inactive gas to flow along the internal wall of reaction chamber and reduce adhesion of reaction product. CONSTITUTION:An upper electrode 2 and a lower electrode 3 on which a sample 5 to be etched is placed are provided and a high frequency power supply 4 is connected within a reaction chamber 1. The reaction chamber 1 is moreover provided with an exhaustion port 6 for exhausting inside thereof and a gas supply port 7 for guiding the etching gas into the reaction chamber 1. The internal wall of reaction chamber 1 at the position a little higher than the upper electrode 2 is provided with a righ-shaped gas injection tube 9 having a plurality of fine holes 11 from which inactive gas is injected and inactive gas supplied from the inactive gas supply tube 10 flows along the internal wall of reaction chamber 1 as indicated by the dotted line. Thereby a very small amount of reaction product is adhered to the internal wall by the etching. |
