| 摘要 |
PURPOSE:To stabilize high acceptance potential and to obtain superior light fatigue resisting characteristics by forming an electrostatic charge blocking layer, a charge transfer layer, and a charge generating layer, each layer being of a specified a-Si type, and incorporating a specified element in the charge generating layer and a specified amt. of O in said blocking layer. CONSTITUTION:The charge blocking layer 44 made of a-SiN hydride or fluoride is arranged under the charge generating layer 43 made of a-Si hydride or fluoride, and an element of group IIIa is added to the layer 43 to form an intrinsic semiconductor by the glow discharge in a diborane/monosilane flow rate ratio of 1-100ppm. The layer 44 contains O in an amt. of 1-20atomic% of the total of Si+C+O, and further, N in an amt. of 30-70atomic%. A surface modifying layer 45 made of a-SiC or a-SiN hydride and/or fluoride contg. C or N in an amt. of 10-70atomic% is formed on the layer 43. The incorporation of O in the blocking layer 44 can enhance both of the charge blocking function and dark resistance, reduce its temp. dependence, and maintain acceptance potential good by forming the intrinsic charge generating layer 43. |
