| 摘要 |
PURPOSE:To obtain the titled array of high photo-response speed by a method wherein the first electrode, a p-layer of amorphous Si, and an i-layer are superposed on a substrate into the common layer of a light receiving element, and an n-layer and the second electrode are discretely superposed at the window-opened part of an insulation film. CONSTITUTION:ITO 2 is evaporated on a glass plate 1, and SiH4 is decomposed by high frequency glow discharge and then mixed with 500ppm or more of B2O5, resulting in the deposition of the p type a-Si 4 in approx. 50Angstrom . The i-type a-Si 5 is laminated in 0.5mum by reducing B2O5 to 100ppm or less. Further, via window 8 of the SiO2 film 7, the n type a-Si 6 is superposed by mixing SiH4 with approx. 500ppm of PH3. Using Al electrodes 9 as a mask, the n-layer 6 is dry- etched with CF4+O2; accordingly, n-layers 6 of the same shape as that of the electrode 9 are completed. This light receiving element array is increased in response speed by accurate impressing of bias voltage because the n-layers 6 are separated and the whole surface in contact with the i-layer 5 contacts with the second electrode 9. Besides, the bit current of an adjacent element does not flow into the n-layers 6, and accurate photocurrent can be taken out in every element. |
