| 摘要 |
PURPOSE:To obtain the titled device of small size by a method wherein the contact due to expansion is prevented during heat treatment for improving the contact or ohmic contact at the time of adhering a gate electrode metal and source-drain electrode metal, by providing an insulation film around the gate. CONSTITUTION:The gate electrode 22 made of a lamination of an Al film 22 and an SiO2 film 77 is formed on a GaAs substrate 1 having an operating layer 2 and covered with a CVD SiO2 8, and SiO2 77 and 78 are left only around the electrode by parallel flat type RIE. Next, AuGe/Ni 9 is evaporated and covered with a resist 33 in the part other than above the gate, and the metal 9 is selectively etched away by ion milling with Ar gas. When the resist 33 is removed, the source-drain metal 99 is split by the gate electrode 22 and an insulation film 88 into completion. The titled device with a very fine interval between the gate and the source-drain can be obtained by this construction. |
