| 摘要 |
PURPOSE:To obtain a flat conductive film over the aperture of a steep side surface by a method wherein the ratio of the coating speed of a conductor film adhered to the flat Si substrate surface in the aperture of an insulation film, to the coating speed of said film to the flat surface on a stepwise difference is controlled by adjustment of coating conditions of substrate bias voltage and so on. CONSTITUTION:A flat Su substrate 201 is coated with a CVDSiO2 film 202, and an apeture (h) is formed. When an Al film 203 is ion-plated by biasing the substrate at about -5kV, neither micro cracks in the aperture nor grooves along the step bottom in the substrate 201 generates. Next, an Al film 205 is formed by biasing the substrate at about -30kV with the result that the Al coating speed on the flat surface 204 in the aperture is about twice that on the flat surface on the hole, step, when an almost flat Al film can be obtained. This manner enables film coating and flattening at the same time in fine apertures in the same vacuum system by using ion plating and can prevent wiring step cuts. |
