发明名称 ORGANIC TRANSISTOR ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method that enables a simple manufacturing of an organic transistor element, which can form an insulation film formed from a photosensitive resin on a fluororesin film having high liquid repellency by wet coating, and which achieves high adhesion between an insulation film formed from the photosensitive resin film through a photolithography process and an insulation film formed from the fluororesin, and which has the insulation film subjected to microfabrication.SOLUTION: A manufacturing method of obtaining an organic transistor element 10 includes the steps of: coating a photosensitive resin component on a laminate, which has a substrate 1, a gate electrode 2, a gate insulation film 3, a source electrode 4, a drain electrode 5, an organic semiconductor layer 6 and a first insulation film 7 which contains a fluororesin (F) and has 105° and over for a water contact angle of surface, to form a photosensitive resin film; and partially exposing and developing the photosensitive resin film to form a second insulation film 8. The photosensitive resin component contains a fluororesin (A) having a crosslinkable group and radical polymerization initiator (C), and a fluorine atom content in a solid content is 10 to 45 mass%.SELECTED DRAWING: Figure 1
申请公布号 JP2016164899(A) 申请公布日期 2016.09.08
申请号 JP20130141597 申请日期 2013.07.05
申请人 ASAHI GLASS CO LTD 发明人 ABE TAKEFUMI;KOO MASAKI;KUWANA YASUHIRO;TAKEYA JUNICHI
分类号 H01L21/336;H01L21/312;H01L29/786;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L21/336
代理机构 代理人
主权项
地址