发明名称 SEMICONDUCTOR THERMAL NEUTRON DETECTOR
摘要 In order to detect thermal neutrons, a semiconductor device such as a diode or a DRAM is provided with a region 10 doped with nuclei having a large capture cross section for thermal neutrons, such as the <10>B boron isotope. The interaction of the thermal neutrons (30) with the <10>B isotope produces an alpha particle and a lithium nucleus (12) which can be detected. By reverse-biasing (7) a diode, the current produced by the motion of the fragments can be detected (8). Alternatively, any alpha particle detector can be used with an appropriate configuration of selected high thermal neutron capture cross-section materials to detect thermal neutrons. <IMAGE>
申请公布号 GB8525754(D0) 申请公布日期 1985.11.20
申请号 GB19850025754 申请日期 1985.10.18
申请人 SGS MICROELETTRONICA SPA 发明人
分类号 G01T3/08;H01L25/04;H01L31/115;(IPC1-7):G01T1/24 主分类号 G01T3/08
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