发明名称 CHEMICAL VAPOR DEPOSITION APPARATUS AND PROCESS
摘要 <p>A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.</p>
申请公布号 CA1196777(A) 申请公布日期 1985.11.19
申请号 CA19830435134 申请日期 1983.08.23
申请人 ANICON, INC. 发明人 CAMPBELL, BRYANT A.;MILLER, NICHOLAS E.
分类号 C23C16/44;C23C14/24;C23C16/46;C23C16/48;(IPC1-7):C23C8/00 主分类号 C23C16/44
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